Investigation of the Thermal Recovery from Reset Breakdown of a SiNx-Based RRAM
DC Field | Value | Language |
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dc.contributor.author | Hong K. | - |
dc.contributor.author | Min K.K. | - |
dc.contributor.author | Kim M.-H. | - |
dc.contributor.author | Bang S. | - |
dc.contributor.author | Kim T.-H. | - |
dc.contributor.author | Lee D.K. | - |
dc.contributor.author | Choi Y.J. | - |
dc.contributor.author | Kim C.S. | - |
dc.contributor.author | Lee J.Y. | - |
dc.contributor.author | Kim S. | - |
dc.contributor.author | Cho S. | - |
dc.contributor.author | Park B.-G. | - |
dc.date.available | 2020-04-20T08:35:12Z | - |
dc.date.created | 2020-04-16 | - |
dc.date.issued | 2020-04 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/27645 | - |
dc.description.abstract | In this article, we report a method for recovering a resistive-switching random access memory (RRAM) from the reset breakdown and enhancing the endurance characteristics. A SiNx-based RRAM device has been fabricated and its switching characteristics are analyzed with a particular interest in reset breakdown. It has been found that the SiNx RRAM in permanent reset breakdown can be revived to high-resistance state (HRS) by thermal recovery, a low-temperature annealing method. The memory window could be widened even with enhanced reset stability and conductance distribution. Temperature-dependent conductance change has been measured in order to figure out the substantial component of conductive filament and the mechanism of thermal recovery. The experimental evidences show that the reset breakdown process is the result of unwanted Si dangling bond (Si-DB) formation. By thermal recovery, Ni filament could be ruptured without applying a high electric field which induces negative set. © 1963-2012 IEEE. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.relation.isPartOf | IEEE Transactions on Electron Devices | - |
dc.title | Investigation of the Thermal Recovery from Reset Breakdown of a SiNx-Based RRAM | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000522559000032 | - |
dc.identifier.doi | 10.1109/TED.2020.2976106 | - |
dc.identifier.bibliographicCitation | IEEE Transactions on Electron Devices, v.67, no.4, pp.1600 - 1605 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85082846099 | - |
dc.citation.endPage | 1605 | - |
dc.citation.startPage | 1600 | - |
dc.citation.title | IEEE Transactions on Electron Devices | - |
dc.citation.volume | 67 | - |
dc.citation.number | 4 | - |
dc.contributor.affiliatedAuthor | Lee J.Y. | - |
dc.contributor.affiliatedAuthor | Cho S. | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Negative set | - |
dc.subject.keywordAuthor | Reset breakdown | - |
dc.subject.keywordAuthor | Resistiveswitching random access memory (RRAM) | - |
dc.subject.keywordAuthor | Si-rich nitride (SiNx) | - |
dc.subject.keywordAuthor | Thermal recovery | - |
dc.subject.keywordPlus | Electric fields | - |
dc.subject.keywordPlus | Recovery | - |
dc.subject.keywordPlus | Temperature | - |
dc.subject.keywordPlus | Thermal oil recovery | - |
dc.subject.keywordPlus | Conductance distribution | - |
dc.subject.keywordPlus | High-resistance state | - |
dc.subject.keywordPlus | Low temperature annealing | - |
dc.subject.keywordPlus | Negative set | - |
dc.subject.keywordPlus | Random access memory | - |
dc.subject.keywordPlus | Reset breakdown | - |
dc.subject.keywordPlus | Switching characteristics | - |
dc.subject.keywordPlus | Thermal recovery | - |
dc.subject.keywordPlus | RRAM | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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