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Design and Characterization of GeSn Junctionless Tunneling FinFET

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dc.contributor.author조성재-
dc.date.available2020-04-24T06:38:22Z-
dc.date.issued2016-07-05-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/28621-
dc.titleDesign and Characterization of GeSn Junctionless Tunneling FinFET-
dc.typeConference-
dc.citation.conferenceName2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)-
dc.citation.conferencePlace일본-
dc.citation.conferencePlaceHakodate, Japan-
dc.citation.endPage329-
dc.citation.startPage326-
dc.citation.titleAWAD 2016 Workshop Digest-
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