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Nanowire PMOSFET having Si core and ultra-thin Ge peripheral channel

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dc.contributor.author조성재-
dc.date.available2020-04-24T06:39:17Z-
dc.date.issued2016-02-23-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/28685-
dc.titleNanowire PMOSFET having Si core and ultra-thin Ge peripheral channel-
dc.typeConference-
dc.citation.conferenceNameThe 23rd Korean Conference on Semiconductors (KCS)-
dc.citation.conferencePlace대한민국-
dc.citation.conferencePlace강원도 하이원리조트-
dc.citation.endPage20-
dc.citation.startPage20-
dc.citation.titleAbstract of the 23rd KCS-
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