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Structural Effects on Unipolar Resistive Switching Behaviors in Oxide-Based RRAM for High-Density and Low-Power Applications

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dc.contributor.author조성재-
dc.date.available2020-04-24T07:36:36Z-
dc.date.issued2015-07-01-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/28805-
dc.titleStructural Effects on Unipolar Resistive Switching Behaviors in Oxide-Based RRAM for High-Density and Low-Power Applications-
dc.typeConference-
dc.citation.conferenceNameThe 30th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC 2015)-
dc.citation.conferencePlace대한민국-
dc.citation.conferencePlace대한민국 서울-
dc.citation.endPage236-
dc.citation.startPage235-
dc.citation.titleProceedings of ITC-CSCC 2015-
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