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A junctionless field-effect transistor with an ultra-thin poly-Si channel for sub-10-nm technology node

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dc.contributor.author조성재-
dc.date.available2020-04-24T07:36:37Z-
dc.date.issued2015-07-01-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/28806-
dc.titleA junctionless field-effect transistor with an ultra-thin poly-Si channel for sub-10-nm technology node-
dc.typeConference-
dc.citation.conferenceName2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)-
dc.citation.conferencePlace일본-
dc.citation.conferencePlace대한민국 제주-
dc.citation.endPage369-
dc.citation.startPage366-
dc.citation.titleProceedings of AWAD 2015-
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