Bias Polarity Dependent Resistive Switching Behavior in Silicon-Nitride Based Memory Cells
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 조성재 | - |
dc.date.available | 2020-04-24T07:36:39Z | - |
dc.date.issued | 2015-06-29 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/28808 | - |
dc.title | Bias Polarity Dependent Resistive Switching Behavior in Silicon-Nitride Based Memory Cells | - |
dc.type | Conference | - |
dc.citation.conferenceName | 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) | - |
dc.citation.conferencePlace | 일본 | - |
dc.citation.conferencePlace | 대한민국 제주 | - |
dc.citation.endPage | 75 | - |
dc.citation.startPage | 73 | - |
dc.citation.title | Proceedings of AWAD 2015 | - |
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