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A novel proessing technique for reducing contact resistance of n+ Si junctions by a high-κ dielectric prepared by atomic layer deposition
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조성재 | - |
| dc.date.available | 2020-04-24T07:38:20Z | - |
| dc.date.issued | 2015-02-12 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/28916 | - |
| dc.title | A novel proessing technique for reducing contact resistance of n+ Si junctions by a high-κ dielectric prepared by atomic layer deposition | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | The 22nd Korean Conference on Semiconductors (KCS 2015) | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 인천 송도컨벤시아 | - |
| dc.citation.endPage | 420 | - |
| dc.citation.startPage | 420 | - |
| dc.citation.title | KCS 2015 Proceedings | - |
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)