Characterization of RF-Sputtered GaN on Si for Electronic and Optical Devices with Higher Scalability
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 조성재 | - |
dc.date.available | 2020-04-24T07:38:32Z | - |
dc.date.issued | 2014-12-08 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/28929 | - |
dc.title | Characterization of RF-Sputtered GaN on Si for Electronic and Optical Devices with Higher Scalability | - |
dc.type | Conference | - |
dc.citation.conferenceName | The 17th International Symposium on the Physics of Semiconductors and Applications | - |
dc.citation.conferencePlace | 대한민국 | - |
dc.citation.conferencePlace | Jeju, Korea | - |
dc.citation.endPage | 26 | - |
dc.citation.startPage | 26 | - |
dc.citation.title | Final Program of the 17th ISPSA | - |
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