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Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on the Top Electrode Metals
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조성재 | - |
| dc.date.available | 2020-04-24T07:40:06Z | - |
| dc.date.issued | 2014-07-01 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/29035 | - |
| dc.title | Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on the Top Electrode Metals | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) | - |
| dc.citation.conferencePlace | 일본 | - |
| dc.citation.conferencePlace | Kanazawa, Japan | - |
| dc.citation.endPage | 130 | - |
| dc.citation.startPage | 128 | - |
| dc.citation.title | Workshop Digest of AWAD 2014 | - |
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)