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O2-Enhanced Surface Treatment of Ge Epitaxially Grown on Si for Heterogeneous Ge Technology
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조성재 | - |
| dc.date.available | 2020-04-24T07:40:15Z | - |
| dc.date.issued | 2014-06-24 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/29045 | - |
| dc.title | O2-Enhanced Surface Treatment of Ge Epitaxially Grown on Si for Heterogeneous Ge Technology | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2014 The 18th IEEE International Symposium on Consumer Electronics (ISCE) | - |
| dc.citation.conferencePlace | 미국 | - |
| dc.citation.conferencePlace | Jeju, Republic of Korea | - |
| dc.citation.endPage | 523 | - |
| dc.citation.startPage | 522 | - |
| dc.citation.title | Proceedings of 2014 ISCE | - |
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Collections - IT융합대학 > 전자공학과 > 2. Conference Papers
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)