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Switching and Conduction Mechanism of Cu/Si3N4/Si RRAM with CMOS Compatibility

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dc.contributor.author조성재-
dc.date.available2020-04-24T07:40:26Z-
dc.date.issued2014-06-09-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/29056-
dc.titleSwitching and Conduction Mechanism of Cu/Si3N4/Si RRAM with CMOS Compatibility-
dc.typeConference-
dc.citation.conferenceName2014 IEEE Silicon Nanoelectronics Workshop (SNW)-
dc.citation.conferencePlace미국-
dc.citation.conferencePlaceHonolulu, USA-
dc.citation.endPage173-
dc.citation.startPage172-
dc.citation.titleProceedings of 2014 IEEE SNW-
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