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Design and Analysis of Gate-Recessed Double Heterojunction AlGaN/GaN Field-Effect Transistor

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dc.contributor.author조성재-
dc.date.available2020-04-24T08:37:08Z-
dc.date.issued2014-02-25-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/29148-
dc.titleDesign and Analysis of Gate-Recessed Double Heterojunction AlGaN/GaN Field-Effect Transistor-
dc.typeConference-
dc.citation.conferenceNameThe 21st Korean Conference on Semiconductors (KCS 2014)-
dc.citation.conferencePlace대한민국-
dc.citation.conferencePlace한양대학교-
dc.citation.endPage109-
dc.citation.startPage109-
dc.citation.titleProceedings of KCS 2014-
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