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Analysis of Radio Frequency Performance on GaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor for Green Energy System Applications

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dc.contributor.author조성재-
dc.date.available2020-04-24T08:37:26Z-
dc.date.issued2014-01-11-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/29168-
dc.titleAnalysis of Radio Frequency Performance on GaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor for Green Energy System Applications-
dc.typeConference-
dc.citation.conferenceName2014 Sixth International Conference on Measuring Technology and Mechatronics Automation (ICMTMA)-
dc.citation.conferencePlace중국-
dc.citation.conferencePlaceHunan, China-
dc.citation.endPage98-
dc.citation.startPage95-
dc.citation.titleProceedings of the 2014 ICMTMA-
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