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The Effect of Spacer Dielectrics on Performance of Ge-Based Tunneling FETs
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조성재 | - |
| dc.date.available | 2020-04-24T08:39:02Z | - |
| dc.date.issued | 2013-11-08 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/29269 | - |
| dc.title | The Effect of Spacer Dielectrics on Performance of Ge-Based Tunneling FETs | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | International Microprocesses and Nanotechnology Conference (MNC) | - |
| dc.citation.conferencePlace | 일본 | - |
| dc.citation.conferencePlace | Kokkaido, Japan | - |
| dc.citation.endPage | 2 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.title | Proceedings of 26th International Microprocesses and Nanotechnology Conference (MNC) 2013 | - |
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)