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Design of AlGaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor for Low-Standby-Power and High-Performance Application

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dc.contributor.author조성재-
dc.date.available2020-04-24T08:39:46Z-
dc.date.issued2013-09-26-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/29319-
dc.titleDesign of AlGaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor for Low-Standby-Power and High-Performance Application-
dc.typeConference-
dc.citation.conferenceNameInternational Conference on Solid State Devices and Materials (SSDM)-
dc.citation.conferencePlace일본-
dc.citation.conferencePlaceFukuoka, Japan-
dc.citation.endPage179-
dc.citation.startPage178-
dc.citation.titleExtended Abstracts of the 2013 International Conference on Solid State Devices and Materials-
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