Analysis of tunneling field-effect transistor with germanium source junction using small-signal equivalent circuit
DC Field | Value | Language |
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dc.contributor.author | Jung, Yung Hun | - |
dc.contributor.author | Kang, In Man | - |
dc.contributor.author | Cho, Seongjae | - |
dc.date.available | 2020-02-27T08:41:14Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2018-12 | - |
dc.identifier.issn | 0895-2477 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/2992 | - |
dc.description.abstract | In this study, germanium is used as the source junction material in a tunneling field-effect transistor (TFET) and the Ge-source TFET is analyzed in the perspectives of high-frequency performances. For analyses on the high-frequency parameters, a small-signal equivalent circuit with high credibility and device simulation are operated in cooperation. The errors in capacitances and transconductances, from both approaches, are within 10% up to the terahertz regime. It is found that the Ge-source TFET has smaller gate-to-drain capacitance and tunneling resistance than Si-source device. These features merit make Ge-source TFET more suitable to wide variety of high-speed and low-power applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY | - |
dc.relation.isPartOf | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | - |
dc.subject | EXTRACTION | - |
dc.title | Analysis of tunneling field-effect transistor with germanium source junction using small-signal equivalent circuit | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000450367500012 | - |
dc.identifier.doi | 10.1002/mop.31438 | - |
dc.identifier.bibliographicCitation | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.60, no.12, pp.2922 - 2927 | - |
dc.identifier.scopusid | 2-s2.0-85055252202 | - |
dc.citation.endPage | 2927 | - |
dc.citation.startPage | 2922 | - |
dc.citation.title | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | - |
dc.citation.volume | 60 | - |
dc.citation.number | 12 | - |
dc.contributor.affiliatedAuthor | Jung, Yung Hun | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | device simulation | - |
dc.subject.keywordAuthor | germanium | - |
dc.subject.keywordAuthor | high-frequency parameters | - |
dc.subject.keywordAuthor | small-signal equivalent circuit | - |
dc.subject.keywordAuthor | source junction | - |
dc.subject.keywordAuthor | tunneling field-effect transistor | - |
dc.subject.keywordPlus | EXTRACTION | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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