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Fabrication Organic Thin Film Transistors with a Al2O3 gate insulator improved by oxygen-ion-beam-assisted deposition
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 권상직 | - |
| dc.date.available | 2020-04-24T15:43:48Z | - |
| dc.date.issued | 2009-09-25 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/33457 | - |
| dc.title | Fabrication Organic Thin Film Transistors with a Al2O3 gate insulator improved by oxygen-ion-beam-assisted deposition | - |
| dc.title.alternative | Fabrication Organic Thin Film Transistors with a Al2O3 gate insulator improved by oxygen-ion-beam-assisted deposition | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2th International Conference on Microelectronics and Plasma Technology | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 부산, Bexco | - |
| dc.citation.endPage | 417 | - |
| dc.citation.startPage | 417 | - |
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