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Fabrication of organic thin film transistor with a Al2O3 gate insulator improved by oxygen-ioin-beam-assisted depositoin
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조의식 | - |
| dc.date.available | 2020-04-24T15:43:51Z | - |
| dc.date.issued | 2009-09-25 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/33461 | - |
| dc.title | Fabrication of organic thin film transistor with a Al2O3 gate insulator improved by oxygen-ioin-beam-assisted depositoin | - |
| dc.title.alternative | Fabrication of organic thin film transistor with a Al2O3 gate insulator improved by oxygen-ioin-beam-assisted depositoin | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | The 2th International Conference on Microelectronics and Plasma Technology(ICMAP2009) | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | Bexco Convention Center, Busan | - |
| dc.citation.endPage | 417 | - |
| dc.citation.startPage | 417 | - |
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