A Study on the Formation of 2-Dimensional Tungsten Disulfide Thin Films on Sapphire Substrate by Sputtering and High Temperature Rapid Thermal Processing

Abstract

As direct formation of p-type two-dimensional transition metal dichalcogenides (TMDC) films on substrates, tungsten disulfide (WS2) thin films were deposited onto sapphire glass substrate through shadow mask patterns by radio-frequency (RF) sputtering at different sputtering powers ranging from 60 W to 150 W and annealed by rapid thermal processing (RTP) at various high temperatures ranging from 500 degrees C to 800 degrees C. Based on scanning electron microscope (SEM) images and Raman spectra, better surface roughness and mode dominant E-2g(1) and A(g)(1) peaks were found for WS2 thin films prepared at higher RF sputtering powers. It was also possible to obtain high mobilities and carrier densities for all WS2 thin films based on results of Hall measurements. Process conditions for these WS2 thin films on sapphire substrate were optimized to low RF sputtering power and high temperature annealing.