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Post-annealing Effects of Al2O3 Gate Dielectric Fabricated with E-beam Process in Organic Thin-Film TransistorsPost-annealing Effects of Al2O3 Gate Dielectric Fabricated with E-beam Process in Organic Thin-Film Transistors
- Alternative Title
- Post-annealing Effects of Al2O3 Gate Dielectric Fabricated with E-beam Process in Organic Thin-Film Transistors
- Authors
- 권상직
- Issue Date
- 5-Dec-2008
- Place
- 일본
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- metadata.conference.dc.citation.conferenceName
- The 15th International Display Workshops
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Collections - IT융합대학 > 전자공학과 > 2. Conference Papers
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