Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Origin of electrically active and inactive defects associated with F impurity in SiO2
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 주형규 | - |
| dc.date.available | 2020-04-24T17:45:36Z | - |
| dc.date.issued | 2008-10-24 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/34775 | - |
| dc.title | Origin of electrically active and inactive defects associated with F impurity in SiO2 | - |
| dc.title.alternative | Origin of electrically active and inactive defects associated with F impurity in SiO2 | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국 물리학회 2008년 추계 학술대회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 전라남도 광주시 김대중 컨벤션 센터 | - |
| dc.citation.endPage | 163 | - |
| dc.citation.startPage | 163 | - |
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 바이오나노대학 > 나노물리학과 > 2. Conference Papers
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Ju, Heong Kyu
- BioNano Technology (Department of Physics)