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Origin of electrically active and inactive defects associated with F impurity in SiO2Origin of electrically active and inactive defects associated with F impurity in SiO2
- Alternative Title
- Origin of electrically active and inactive defects associated with F impurity in SiO2
- Authors
- 주형규
- Issue Date
- 24-Oct-2008
- Place
- 대한민국
전라남도 광주시 김대중 컨벤션 센터
- metadata.conference.dc.citation.conferenceName
- 한국 물리학회 2008년 추계 학술대회
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Collections - 바이오나노대학 > 나노물리학과 > 2. Conference Papers
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Related Researcher
- Ju, Heong Kyu
- BioNano Technology (Department of Physics)