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Fabracatioin of Sputtered Mo Gated Silicon Field Emitter Arrays by using the Condition of Silicon Dry Etch

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dc.contributor.author조의식-
dc.date.available2020-04-24T20:38:15Z-
dc.date.issued2007-11-14-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/35797-
dc.titleFabracatioin of Sputtered Mo Gated Silicon Field Emitter Arrays by using the Condition of Silicon Dry Etch-
dc.title.alternativeFabracatioin of Sputtered Mo Gated Silicon Field Emitter Arrays by using the Condition of Silicon Dry Etch-
dc.typeConference-
dc.citation.conferenceName29th International Symposium on Dry Process-
dc.citation.conferencePlace일본-
dc.citation.conferencePlaceTokyo International Exchange Center, Tokyo-
dc.citation.endPage64-
dc.citation.startPage63-
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반도체대학 (반도체·전자공학부)
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