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Characteristics of Photo Leakage Chracteristics of a-Si:H TFT caused by illuminations from various Light Sources
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조의식 | - |
| dc.date.available | 2020-04-24T20:38:15Z | - |
| dc.date.issued | 2007-11-14 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/35798 | - |
| dc.title | Characteristics of Photo Leakage Chracteristics of a-Si:H TFT caused by illuminations from various Light Sources | - |
| dc.title.alternative | Characteristics of Photo Leakage Chracteristics of a-Si:H TFT caused by illuminations from various Light Sources | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 29th International Symposium on Dry Process | - |
| dc.citation.conferencePlace | 일본 | - |
| dc.citation.conferencePlace | Tokyo International Exchange Center, Tokyo | - |
| dc.citation.endPage | 130 | - |
| dc.citation.startPage | 129 | - |
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