Chracteristics of Photo leakage Currents of a-Si:H TFT caused by the illumination from CCFL and RGB LED
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 조의식 | - |
dc.date.available | 2020-04-24T21:38:55Z | - |
dc.date.issued | 2007-06-22 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/36152 | - |
dc.title | Chracteristics of Photo leakage Currents of a-Si:H TFT caused by the illumination from CCFL and RGB LED | - |
dc.title.alternative | Chracteristics of Photo leakage Currents of a-Si:H TFT caused by the illumination from CCFL and RGB LED | - |
dc.type | Conference | - |
dc.citation.conferenceName | 2007 the 11th Internatoinal Symposium on Advanced Display Materials and Devices | - |
dc.citation.conferencePlace | 대한민국 | - |
dc.citation.conferencePlace | Daegu, Korea | - |
dc.citation.endPage | 300 | - |
dc.citation.startPage | 299 | - |
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