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Charasteristics of MgO Protective Layer Deposited by O+ IBAD Method in AC PDP

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dc.contributor.author권상직-
dc.date.available2020-04-24T22:39:24Z-
dc.date.issued2006-12-08-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/36488-
dc.titleCharasteristics of MgO Protective Layer Deposited by O+ IBAD Method in AC PDP-
dc.title.alternativeCharasteristics of MgO Protective Layer Deposited by O+ IBAD Method in AC PDP-
dc.typeConference-
dc.citation.conferenceNameThe 13th International Display Workshops-
dc.citation.conferencePlace일본-
dc.citation.conferencePlaceOtsu, 일본-
dc.citation.endPage1164-
dc.citation.startPage1161-
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반도체대학 (반도체·전자공학부)
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