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ZnO buffer layer 제작과 c-축 배향성 향상으로 인한 FBAR 성능 개선에 관한 연구
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 신영화 | - |
| dc.date.available | 2020-04-24T23:36:13Z | - |
| dc.date.issued | 2006-11-11 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/36595 | - |
| dc.title | ZnO buffer layer 제작과 c-축 배향성 향상으로 인한 FBAR 성능 개선에 관한 연구 | - |
| dc.title.alternative | Performance of FBAR devices was enhanced by fabrication of ZnO buffer layer and improvement of c-axis orientation | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2006년도 한국전기전자재료학회 추계학술대회 | - |
| dc.citation.conferencePlace | South Korea | - |
| dc.citation.conferencePlace | 전북대학교 | - |
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