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ZnO buffer layer 제작과 c-축 배향성 향상으로 인한 FBAR 성능 개선에 관한 연구Performance of FBAR devices was enhanced by fabrication of ZnO buffer layer and improvement of c-axis orientation
- Alternative Title
- Performance of FBAR devices was enhanced by fabrication of ZnO buffer layer and improvement of c-axis orientation
- Authors
- 신영화
- Issue Date
- 11-Nov-2006
- Place
- South Korea
전북대학교
- metadata.conference.dc.citation.conferenceName
- 2006년도 한국전기전자재료학회 추계학술대회
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