Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes
DC Field | Value | Language |
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dc.contributor.author | Yu, Eunseon | - |
dc.contributor.author | Lee, Won-Jun | - |
dc.contributor.author | Jung, Jongwan | - |
dc.contributor.author | Cho, Seongjae | - |
dc.date.available | 2020-02-27T11:41:03Z | - |
dc.date.created | 2020-02-07 | - |
dc.date.issued | 2018-04 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/3884 | - |
dc.description.abstract | In this paper, we propose an ultrathin SiGe shell channel p-type FinFET for sub-10-nm technology nodes. Owing to the large valence band offset (VBO or Delta E-v) between SiGe shell and Si fin, a hole quantum well is configured in the high-mobility SiGe region as the major conduction path. The proposed device is optimally designed and characterized in dc and ac. Here, high-kappa/metal gate is adopted for strong gate controllability and the high degree of freedom in threshold voltage (V-th) adjustment. For a high reliability, modeling of the mobility (mu) and saturation velocity (v(sat)) is carried out for different Ge fractions (x). The E-g and VBO are also determined for different x from empirical data. With the set of modeled values and various quantum-mechanical models, the proposed device has been simulated through rigorous 3-D technology computer-aided design simulation. The designed device shows a high scalability reaching down to L-g = 5 nm. At L-g of 5 nm with a driving voltage (V-DD) of -0.5 V, a current gain cutoff frequency (f(T)) = 368.88 GHz, dynamic power = 0.055 fJ/mu m, and an intrinsic delay (tau) = 0.37 ps are achieved. This is confirmed by the potential low-power and high-speed operations with a strong gate controllability. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.subject | HOLE DRIFT VELOCITY | - |
dc.subject | MOBILITY | - |
dc.subject | GE | - |
dc.subject | GERMANIUM | - |
dc.subject | MOSFETS | - |
dc.subject | FIELD | - |
dc.subject | RELIABILITY | - |
dc.subject | KINETICS | - |
dc.subject | SILICON | - |
dc.subject | HFO2 | - |
dc.title | Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000427856300004 | - |
dc.identifier.doi | 10.1109/TED.2018.2808764 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.4, pp.1290 - 1297 | - |
dc.identifier.scopusid | 2-s2.0-85042866485 | - |
dc.citation.endPage | 1297 | - |
dc.citation.startPage | 1290 | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 65 | - |
dc.citation.number | 4 | - |
dc.contributor.affiliatedAuthor | Yu, Eunseon | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | High mobility | - |
dc.subject.keywordAuthor | high-kappa/metal gate (HKMG) | - |
dc.subject.keywordAuthor | low-power (LP) high-speed operation | - |
dc.subject.keywordAuthor | p-type FinFET | - |
dc.subject.keywordAuthor | quantum well (QW) | - |
dc.subject.keywordAuthor | shell channel | - |
dc.subject.keywordAuthor | SiGe | - |
dc.subject.keywordAuthor | SiGe modeling | - |
dc.subject.keywordAuthor | strong gate controllability | - |
dc.subject.keywordAuthor | technology computer-aided design (TCAD) simulation | - |
dc.subject.keywordAuthor | valence band offset (VBO) | - |
dc.subject.keywordPlus | HOLE DRIFT VELOCITY | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | GE | - |
dc.subject.keywordPlus | GERMANIUM | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | FIELD | - |
dc.subject.keywordPlus | RELIABILITY | - |
dc.subject.keywordPlus | KINETICS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | HFO2 | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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