Direct Formation of 2-dimensional Molybdenum Disulfide Thin Films by RF Sputtering and Rapid Thermal Annealing on Sapphire Substrate
DC Field | Value | Language |
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dc.contributor.author | Yin, Min Yu | - |
dc.contributor.author | Kwon, Sang Jik | - |
dc.contributor.author | Cho, Eou-Sik | - |
dc.date.available | 2020-02-27T11:41:17Z | - |
dc.date.created | 2020-02-07 | - |
dc.date.issued | 2018-04 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/3914 | - |
dc.description.abstract | For the realization of well-patterned two-dimensional transition metal dichalcogenide (TMDC) films, molybdenum disulfide (MoS2) films were formed on sapphire substrate by radio-frequency (RF) sputtering with a shadow mask followed by rapid thermal annealing (RTA). The films were deposited using various sputtering power and annealed at different temperatures of 600 to 800 degrees C. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) indicate more noticeable peaks when higher RF power and annealing temperature are used. However, analyses with a scanning electron microscope (SEM) and atomic force microscope (AFM) show that the MoS2 films sputtered at lower RF sputtering power have a better surface as a result of the different coefficients of thermal expansion (CTEs). The high mobility and carrier density were also investigated for all the MoS2 films. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEK PUBLICATION CENTER | - |
dc.relation.isPartOf | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.title | Direct Formation of 2-dimensional Molybdenum Disulfide Thin Films by RF Sputtering and Rapid Thermal Annealing on Sapphire Substrate | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000432340100005 | - |
dc.identifier.doi | 10.5573/JSTS.2018.18.2.153 | - |
dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.18, no.2, pp.153 - 159 | - |
dc.identifier.kciid | ART002338825 | - |
dc.identifier.scopusid | 2-s2.0-85046478273 | - |
dc.citation.endPage | 159 | - |
dc.citation.startPage | 153 | - |
dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.volume | 18 | - |
dc.citation.number | 2 | - |
dc.contributor.affiliatedAuthor | Yin, Min Yu | - |
dc.contributor.affiliatedAuthor | Kwon, Sang Jik | - |
dc.contributor.affiliatedAuthor | Cho, Eou-Sik | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | Molybdenum disulfide (MoS2) | - |
dc.subject.keywordAuthor | RF sputtering | - |
dc.subject.keywordAuthor | rapid thermal annealing (RTA) | - |
dc.subject.keywordAuthor | sapphire substrate | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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