Circuit-level simulation of resistive-switching random-access memory cross-point array based on a highly reliable compact model
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Min-Hwi | - |
dc.contributor.author | Kim, Sungjun | - |
dc.contributor.author | Ryoo, Kyung-Chang | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.date.available | 2020-02-27T11:42:06Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2018-03 | - |
dc.identifier.issn | 1569-8025 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/4026 | - |
dc.description.abstract | In this study, a simple, reliable, and universal circuit model of bipolar resistive-switching random-access memory (RRAM) is presented for the circuit-level simulation of a high-density cross-point RRAM array. For higher accuracy and reliability, the compact model has been developed to match the measurement data of the fabricated RRAM devices with SiNx and HfOx switching layers showing different reset switching behaviors. In the SPICE simulation, the RRAM cross-point array is virtually realized by embedding the empirically modeled memory cells, by which device performances such as read margin and power consumption in the high-density array are closely investigated. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.relation.isPartOf | JOURNAL OF COMPUTATIONAL ELECTRONICS | - |
dc.title | Circuit-level simulation of resistive-switching random-access memory cross-point array based on a highly reliable compact model | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000425761200032 | - |
dc.identifier.doi | 10.1007/s10825-017-1116-2 | - |
dc.identifier.bibliographicCitation | JOURNAL OF COMPUTATIONAL ELECTRONICS, v.17, no.1, pp.273 - 278 | - |
dc.identifier.scopusid | 2-s2.0-85037363111 | - |
dc.citation.endPage | 278 | - |
dc.citation.startPage | 273 | - |
dc.citation.title | JOURNAL OF COMPUTATIONAL ELECTRONICS | - |
dc.citation.volume | 17 | - |
dc.citation.number | 1 | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Circuit model | - |
dc.subject.keywordAuthor | Bipolar switching | - |
dc.subject.keywordAuthor | RRAM | - |
dc.subject.keywordAuthor | Cross-point array | - |
dc.subject.keywordAuthor | SPICE | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea(13120)031-750-5114
COPYRIGHT 2020 Gachon University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.