Review of contact-resistance analysis in nano-material
- Authors
- Park, Jae Young; Cho, Jinsoo; Jun, Seong Chan
- Issue Date
- Feb-2018
- Publisher
- KOREAN SOC MECHANICAL ENGINEERS
- Keywords
- CNTs; Contact resistance; Field-effect transistor; Graphene; Low-dimensional material; MoS2; Nanowire; Schottky barrier
- Citation
- JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY, v.32, no.2, pp.539 - 547
- Journal Title
- JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY
- Volume
- 32
- Number
- 2
- Start Page
- 539
- End Page
- 547
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/4079
- DOI
- 10.1007/s12206-018-0101-9
- ISSN
- 1738-494X
- Abstract
- Recently, investigating the unique electrical properties of low-dimensional (One- and two-dimensional) materials as alternatives to silicon has become popular among researchers. In order to observe the intrinsic properties and device performance, it is essential to elucidate the electron transport at the electrode/nanomaterial interface. This study reviews various current approaches used to evaluate the contact resistance of electronic devices based on the most representative low-dimensional nano-materials such as carbon nanotubes, nanowires, graphene and molybdenum disulfide. Various analytical factors that have generally not been considered in conventional electronics are introduced to define the contact resistance within the nano-meter scale. Additionally, a comparison of three different methods for determining the contact resistance to interpret experimental data is conducted. Finally, several attempted efforts to reduce the contact resistance are presented.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - IT융합대학 > 컴퓨터공학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/4079)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.