A 3.3 V, 8.89 μa and 5.5 ppm/°C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems

Abstract

A 3.3 V CMOS bandgap reference (BGR) was presented in this study that utilizes MOS transistors operating in the sub-threshold region. The complexity of the circuit and the dependency of the voltage reference on power supply variations are simultaneously decreased through the use of a new compensation circuit technique. The proposed BGR is simulated using a 0.35 μm CMOS standard process. Consequently, a 5.53 ppm/°C temperature coefficient is obtained in the -40∼+125 °C temperature range, the maximum power supply rejection ratio is - 62 dB, and a 2.033 mV/V voltage line regulation is achieved for the 2.3∼ 4.3 V supply voltage. The proposed circuit dissipates a supply current of 8.89 IJA at a 3.3 V supply voltage, and the active area is 112 μm× 60 μm. © 2018 IEEE.