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Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime Through Its Small-Signal Equivalent Circuit
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jung, Y.H. | - |
| dc.contributor.author | Kang, I.M. | - |
| dc.contributor.author | Cho, S. | - |
| dc.date.available | 2020-02-27T12:44:18Z | - |
| dc.date.created | 2020-02-12 | - |
| dc.date.issued | 2018 | - |
| dc.identifier.issn | 1559-9450 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/4418 | - |
| dc.description.abstract | In this study, Si 1-x Ge x is used as the source junction material in a tunneling field-effect transistor (TFET)and the device is analyzed in the perspectives of radio-frequency (RF)performances. Using the small-signal equivalent circuit with high accuracy in the RF domain, the errors in capacitances and transconductances have been effectively suppressed below 11 % at 600 GHz. © 2018 The Institute of Electronics, Information and Communication Engineers (IEICE). | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.relation.isPartOf | Progress in Electromagnetics Research Symposium | - |
| dc.subject | Heterojunctions | - |
| dc.subject | Microwave circuits | - |
| dc.subject | Si-Ge alloys | - |
| dc.subject | Timing circuits | - |
| dc.subject | Tunnel field effect transistors | - |
| dc.subject | High-accuracy | - |
| dc.subject | Microwave regime | - |
| dc.subject | Radio frequencies | - |
| dc.subject | Si-Ge heterojunction | - |
| dc.subject | Si1-xGex | - |
| dc.subject | Small signal equivalent circuit | - |
| dc.subject | Source junctions | - |
| dc.subject | Tunneling field-effect transistors | - |
| dc.subject | Equivalent circuits | - |
| dc.title | Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime Through Its Small-Signal Equivalent Circuit | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.description.journalClass | 1 | - |
| dc.identifier.doi | 10.23919/PIERS.2018.8598056 | - |
| dc.identifier.bibliographicCitation | Progress in Electromagnetics Research Symposium, v.2018-August, pp.2550 - 2553 | - |
| dc.identifier.scopusid | 2-s2.0-85060951981 | - |
| dc.citation.endPage | 2553 | - |
| dc.citation.startPage | 2550 | - |
| dc.citation.title | Progress in Electromagnetics Research Symposium | - |
| dc.citation.volume | 2018-August | - |
| dc.contributor.affiliatedAuthor | Jung, Y.H. | - |
| dc.contributor.affiliatedAuthor | Cho, S. | - |
| dc.type.docType | Conference Paper | - |
| dc.subject.keywordPlus | Heterojunctions | - |
| dc.subject.keywordPlus | Microwave circuits | - |
| dc.subject.keywordPlus | Si-Ge alloys | - |
| dc.subject.keywordPlus | Timing circuits | - |
| dc.subject.keywordPlus | Tunnel field effect transistors | - |
| dc.subject.keywordPlus | High-accuracy | - |
| dc.subject.keywordPlus | Microwave regime | - |
| dc.subject.keywordPlus | Radio frequencies | - |
| dc.subject.keywordPlus | Si-Ge heterojunction | - |
| dc.subject.keywordPlus | Si1-xGex | - |
| dc.subject.keywordPlus | Small signal equivalent circuit | - |
| dc.subject.keywordPlus | Source junctions | - |
| dc.subject.keywordPlus | Tunneling field-effect transistors | - |
| dc.subject.keywordPlus | Equivalent circuits | - |
| dc.description.journalRegisteredClass | scopus | - |
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)