DC 스퍼터링을 이용한 소다라임 유리 기판상에2차원 황화텅스텐 박막 형성 공정

Abstract

Tungsten disulfide(WS2) thin films were directly deposited by direct-current(DC) sputtering and annealed by rapid thermal processing(RTP) to materialize two-dimensional p-type transition metal dichalcogenide (TMDC) thin films on soda-lime glass substrates without any complicated exfoliation/transfer process. WS2 thin films deposited at various DC sputtering powers from 80 W to 160W were annealed at different temperatures from 400 ℃ to 550 ℃ considering the melting temperature of soda-lime glass. The optical microscope results showed the stable surface morphologies of the WS2 thin films without any defects. The X-ray photoelectron spectroscopy (XPS) results and the Hall measurement results showed stable binding energies of W and S and high carrier mobilities of WS2 thin films.