Electrical Performances of InN/GaN Tunneling Field-Effect Transistor

Abstract

In this paper, we design and analyze the InN/GaN double-gate (DG) tunneling field-effect transistor (TFET) with very steep switching and superb DC and RF characteristics. The proposed device is closely investigated in terms of both DC and RF performances including I-on, I-off, on/off current ratio (I-on/I-off), subthreshold swing (S), cut-off frequency (f(t)), maximum oscillating frequency (f(max)), and Johnson's figure of merit (JFOM) using TCAD simulation. The proposed InN/GaN TFET shows high current drivability, extremely suppressed I-off, and higly sharp switching owing to the effects by the electron well formed by the control gate (CG) in the InN layer. The InN/GaN TFET having a channel length (L-ch) of 50 nm demonstrated maximum I-on = 3.5 mA/mu m, extremely low I-off = 1 x 10(-21) A/mu m, minimum S of 8.8 mV/dec, and the maximum values of f(t) and f(max) are obtained as 100 GHz and 5.5 THz, respectively. In order to confirm the high performances of the devices in the RF operation, JFOM has been calculated and the value extracted from an optimally designed InN/GaN TFET is 1.7 THz.V.