Annealing Dependence of Negative Bias Temperature Instability (NBTI) in 4H-SiC MOSFETs
- Authors
- Koo, Sang-Mo; Jung, Se-Woong; Moon, Kyoung-Sook; Lee, Sang-Kwon; Kim, So-Mang
- Issue Date
- Oct-2017
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- 4H-SiC MOSFET; NBTI; Trapping; Threshold Voltage; Oxide Charge
- Citation
- JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.12, no.10, pp.1167 - 1171
- Journal Title
- JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
- Volume
- 12
- Number
- 10
- Start Page
- 1167
- End Page
- 1171
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/5628
- DOI
- 10.1166/jno.2017.2178
- ISSN
- 1555-130X
- Abstract
- In this work, we report on the improvement of negative bias temperature instability (NBTI) in 4H-SiC MOS-FETs by annealing process in NO (Device B), compared to in N2O (Device A). The V-th shift and interface properties of SiC MOSFETs under negative bias stress were investigated. The Device A and B have Delta V-th values of 0.51 V and 0.09 V, respectively. From the time dependences, we applied a two component model that considers nitrogen(N)-related traps. The relatively small value of Delta V-th is indicative of the decrease in the oxide traps and activation of nitrogen-related traps. The N-it of the Device B was decreased about 17 times compared to Device A. These results indicate to the reduction of the N-related defects into the oxide network. Controlling of nitrogen in SiO2 is important for the long-term V-th stability of SiC-MOSFETs under NBT stress.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 경영대학 > 금융수학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.