산화물구리 기반 이종접합형 태양전지의 후열처리효과

Abstract

Copper Oxide (CuO) films were deposited on the n-type silicon wafer by rf magnetron sputtering for heterojunction solar cells. And then the samples were treated as a function of the annealing temperature (300-600°C) in a vacuum. Their electrical, optical and structural properties of the fabricated heterojunction solar cells were then investigated and the power conversion efficiencies (PCE) of the fabricated p-type copper oxide/n-type Si heterojunction cells were measured using solar simulator. After being treated at temperature of 500°C, the solar cells with CuO film have PCE of 0.43%, Current density of 5.37mA/cm2, Fill Factor of 39.82%.