Solution-processed n-ZnO nanorod/p-Co3O4 nanoplate heterojunction light-emitting diode
- Authors
- Kim, Jong-Woo; Lee, Su Jeong; Biswas, Pranab; Il Lee, Tae; Myoung, Jae-Min
- Issue Date
- 1-Jun-2017
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- p-type Co3O4 nanoplate; n-type ZnO nanorod; Heteroepitaxial p-n junction; Solution process; Light-emitting diode
- Citation
- APPLIED SURFACE SCIENCE, v.406, pp.192 - 198
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 406
- Start Page
- 192
- End Page
- 198
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/6031
- DOI
- 10.1016/j.apsusc.2017.02.129
- ISSN
- 0169-4332
- Abstract
- A heterojunction light-emitting diode (LED) based on p-type cobalt oxide (Co3O4) nanoplates (NPs)/n-type zinc oxide (ZnO) nanorods (NRs) is demonstrated. Using a low-temperature aqueous solution process, the n-type ZnO NRs were epitaxially grown on Co3O4 NPs which were two-dimensionally assembled by a modified Langmuir-Blodgett process. The heterojunction LEDs exhibited a typical rectifying behavior with a turn-on voltage of about 2 V and emitted not only reddish-orange light at 610 nm but also violet light at about 400 nm. From the comparative analyses of electroluminescence and photoluminescence, it was determined that the reddish-orange light emission was related to the electronic transitions from zinc interstitials (Zn-i) to oxygen interstitials (O-i) or conduction-band minimum (CBM) to oxygen vacancies (V-o), and the violet light emission was attribute to the transition from CBM to valence-band maximum (VBM) or Zn-1 to zinc vacancies (V-zn). (C) 2017 Elsevier B.V. All rights reserved.
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