Surface Functionalization of WO3 Thin Films with (3-Aminopropyl)triethoxysilane and Succinic Anhydride
DC Field | Value | Language |
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dc.contributor.author | Thi Kieu Hanh Ta | - |
dc.contributor.author | Thi Nhu Hoa Tran | - |
dc.contributor.author | Quang Minh Nhat Tran | - |
dc.contributor.author | Duy Phong Pham | - |
dc.contributor.author | Kim Ngoc Pham | - |
dc.contributor.author | Thi Thanh Cao | - |
dc.contributor.author | Yong Soo Kim | - |
dc.contributor.author | Dai Lam Tran | - |
dc.contributor.author | Ju, Heongkyu | - |
dc.contributor.author | Bach Thang Phan | - |
dc.date.available | 2020-02-27T18:42:28Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2017-06 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/6054 | - |
dc.description.abstract | We report effects of oxygen plasma treatment on the surface functionalization of WO3 thin films with (3-aminopropyl)triethoxysilane (APTES) and succinic anhydride (SA). X-ray diffraction and x-ray photoelectron spectroscopy results indicate the existence of the WO3 phase. Fourier transform infrared spectroscopy measurement shows clear bands at 1040 cm(-1) (Si-O-Si), 1556 cm(-1) (N-H), 1655 cm(-1) (C=O), 2937 cm(-1) (C-H) and 3298 cm(-1) (N-H), confirming the surface functionalization efficiency enhanced by prior treatment of oxygen plasma. It thus follows that the prior oxygen plasma treatment activates hydroxylation with more -OH groups on the WO3 surface, which can pave a highly efficient way to the surface functionalization by APTES and SA. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.relation.isPartOf | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.subject | INDIUM TIN OXIDE | - |
dc.subject | SOL-GEL | - |
dc.subject | MEMRISTIVE-BIOSENSORS | - |
dc.subject | STATES | - |
dc.subject | CRYSTALLINITY | - |
dc.subject | NANOPARTICLES | - |
dc.subject | SPECTROSCOPY | - |
dc.subject | INJECTION | - |
dc.title | Surface Functionalization of WO3 Thin Films with (3-Aminopropyl)triethoxysilane and Succinic Anhydride | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000400560400011 | - |
dc.identifier.doi | 10.1007/s11664-017-5408-x | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTRONIC MATERIALS, v.46, no.6, pp.3345 - 3352 | - |
dc.identifier.scopusid | 2-s2.0-85015222687 | - |
dc.citation.endPage | 3352 | - |
dc.citation.startPage | 3345 | - |
dc.citation.title | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.volume | 46 | - |
dc.citation.number | 6 | - |
dc.contributor.affiliatedAuthor | Thi Nhu Hoa Tran | - |
dc.contributor.affiliatedAuthor | Duy Phong Pham | - |
dc.contributor.affiliatedAuthor | Ju, Heongkyu | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Memristor biosensor | - |
dc.subject.keywordAuthor | resistive switching WO3 thin films | - |
dc.subject.keywordAuthor | oxygen plasama treatment | - |
dc.subject.keywordAuthor | surface functionalization | - |
dc.subject.keywordAuthor | (3-aminopropyl)triethoxysilane | - |
dc.subject.keywordAuthor | succinic anhydride | - |
dc.subject.keywordPlus | INDIUM TIN OXIDE | - |
dc.subject.keywordPlus | SOL-GEL | - |
dc.subject.keywordPlus | MEMRISTIVE-BIOSENSORS | - |
dc.subject.keywordPlus | STATES | - |
dc.subject.keywordPlus | CRYSTALLINITY | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | INJECTION | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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