Surface Functionalization of WO3 Thin Films with (3-Aminopropyl)triethoxysilane and Succinic Anhydride
- Authors
- Thi Kieu Hanh Ta; Thi Nhu Hoa Tran; Quang Minh Nhat Tran; Duy Phong Pham; Kim Ngoc Pham; Thi Thanh Cao; Yong Soo Kim; Dai Lam Tran; Ju, Heongkyu; Bach Thang Phan
- Issue Date
- Jun-2017
- Publisher
- SPRINGER
- Keywords
- Memristor biosensor; resistive switching WO3 thin films; oxygen plasama treatment; surface functionalization; (3-aminopropyl)triethoxysilane; succinic anhydride
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, v.46, no.6, pp.3345 - 3352
- Journal Title
- JOURNAL OF ELECTRONIC MATERIALS
- Volume
- 46
- Number
- 6
- Start Page
- 3345
- End Page
- 3352
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/6054
- DOI
- 10.1007/s11664-017-5408-x
- ISSN
- 0361-5235
- Abstract
- We report effects of oxygen plasma treatment on the surface functionalization of WO3 thin films with (3-aminopropyl)triethoxysilane (APTES) and succinic anhydride (SA). X-ray diffraction and x-ray photoelectron spectroscopy results indicate the existence of the WO3 phase. Fourier transform infrared spectroscopy measurement shows clear bands at 1040 cm(-1) (Si-O-Si), 1556 cm(-1) (N-H), 1655 cm(-1) (C=O), 2937 cm(-1) (C-H) and 3298 cm(-1) (N-H), confirming the surface functionalization efficiency enhanced by prior treatment of oxygen plasma. It thus follows that the prior oxygen plasma treatment activates hydroxylation with more -OH groups on the WO3 surface, which can pave a highly efficient way to the surface functionalization by APTES and SA.
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