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Surface Functionalization of WO3 Thin Films with (3-Aminopropyl)triethoxysilane and Succinic Anhydride

Authors
Thi Kieu Hanh TaThi Nhu Hoa TranQuang Minh Nhat TranDuy Phong PhamKim Ngoc PhamThi Thanh CaoYong Soo KimDai Lam TranJu, HeongkyuBach Thang Phan
Issue Date
Jun-2017
Publisher
SPRINGER
Keywords
Memristor biosensor; resistive switching WO3 thin films; oxygen plasama treatment; surface functionalization; (3-aminopropyl)triethoxysilane; succinic anhydride
Citation
JOURNAL OF ELECTRONIC MATERIALS, v.46, no.6, pp.3345 - 3352
Journal Title
JOURNAL OF ELECTRONIC MATERIALS
Volume
46
Number
6
Start Page
3345
End Page
3352
URI
https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/6054
DOI
10.1007/s11664-017-5408-x
ISSN
0361-5235
Abstract
We report effects of oxygen plasma treatment on the surface functionalization of WO3 thin films with (3-aminopropyl)triethoxysilane (APTES) and succinic anhydride (SA). X-ray diffraction and x-ray photoelectron spectroscopy results indicate the existence of the WO3 phase. Fourier transform infrared spectroscopy measurement shows clear bands at 1040 cm(-1) (Si-O-Si), 1556 cm(-1) (N-H), 1655 cm(-1) (C=O), 2937 cm(-1) (C-H) and 3298 cm(-1) (N-H), confirming the surface functionalization efficiency enhanced by prior treatment of oxygen plasma. It thus follows that the prior oxygen plasma treatment activates hydroxylation with more -OH groups on the WO3 surface, which can pave a highly efficient way to the surface functionalization by APTES and SA.
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