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2. Conference Papers
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Results 1-7 of 7 (Search time: 0.002 seconds).
Ab Initio Calculation of Effective Density of States of GeSn and Its Application to Evaluate the Current Drivability of Tunneling Field-Effect Transistor with GeSn Source Junction
조성재
Conference
Issue Date
2016
Place
일본; Hakodate, Japan
Design and Characterization of GeSn Junctionless Tunneling FinFET
조성재
Conference
Issue Date
2016
Place
일본; Hakodate, Japan
Characterization of the vertical position of the trapped charge in charge-trap flash memory
조성재
Conference
Issue Date
2016
Place
일본; Hakodate, Japan
Self-compliance bipolar resistive switching in Ni/Ti/SiOx/Si structure
조성재
Conference
Issue Date
2016
Place
일본; Hakodate, Japan
SiN-Based Resistive Random-Access Memory Inserting Tunnel Barrier
조성재
Conference
Issue Date
2016
Place
일본; Hakodate, Japan
Method for High Hole Injection into Light-Emitting Diodes by Trench Patterning and p-AlGaN Regrowth
조성재
Conference
Issue Date
2016
Place
일본; Hakodate, Japan
Simulaton of nanowire p-type metal-oxide-semiconductor field-effect transistor (PMOSFET) having SiGe channel on Si core at different Ge fractions
조성재
Conference
Issue Date
2016
Place
일본; Hakodate, Japan
1
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Author
Cho, Seong Jae
7
Date Issued
2016
7
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