Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering
DC Field | Value | Language |
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dc.contributor.author | Ryu, Ji-Ho | - |
dc.contributor.author | Kim, Boram | - |
dc.contributor.author | Hussain, Fayyaz | - |
dc.contributor.author | Ismail, Muhammad | - |
dc.contributor.author | Mahata, Chandreswar | - |
dc.contributor.author | Oh, Teresa | - |
dc.contributor.author | Imran, Muhammad | - |
dc.contributor.author | Min, Kyung Kyu | - |
dc.contributor.author | Kim, Tae-Hyeon | - |
dc.contributor.author | Byung-Yang | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.contributor.author | Kim, Yoon | - |
dc.contributor.author | Kim, Sungjun | - |
dc.date.available | 2020-08-13T01:35:34Z | - |
dc.date.created | 2020-08-13 | - |
dc.date.issued | 2020-07 | - |
dc.identifier.issn | 2169-3536 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/77449 | - |
dc.description.abstract | Neuromorphic computing offers parallel data processing and low energy consumption and can be useful to replace conventional von Neumann computing. Memristors are two-terminal devices with varying conductance that can be used as synaptic arrays in hardware-based neuromorphic devices. In this research, we extensively investigate the analog symmetric multi-level switching characteristics of zinc tin oxide (ZTO)-based memristor devices for neuromorphic systems. A ZTO semiconductor layer is introduced between a complementary metal-oxide-semiconductor (CMOS) compatible Ni top electrode and a highly doped poly-Si bottom electrode. A variety of bio-realistic synaptic features are demonstrated, including long-term potentiation (LTP), long-term depression (LTD), and spike timing-dependent plasticity (STDP). The Ni/ZTO/Si device in which the adjustment of the number of states in conductance is realized by applying different pulse schemes is highly suitable for hardware-based neuromorphic applications. We evaluate the pattern recognition accuracy by implementing a system-level neural network simulation with ZTO-based memristor synapses. The density of states (DOS) and charge density plots reveal that oxygen vacancies in ZTO assist in generating resistive switching in the Ni/ZTO/Si device. The proposed ZTO-based memristor composed of metal-insulator-semiconductor (MIS) structure is expected to contribute to future neuromorphic applications through further studies. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE ACCESS | - |
dc.title | Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000554042500001 | - |
dc.identifier.doi | 10.1109/ACCESS.2020.3005303 | - |
dc.identifier.bibliographicCitation | IEEE ACCESS, v.8, pp.130678 - 130686 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85089521940 | - |
dc.citation.endPage | 130686 | - |
dc.citation.startPage | 130678 | - |
dc.citation.title | IEEE ACCESS | - |
dc.citation.volume | 8 | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Neuromorphics | - |
dc.subject.keywordAuthor | Zinc | - |
dc.subject.keywordAuthor | Memristors | - |
dc.subject.keywordAuthor | Electrodes | - |
dc.subject.keywordAuthor | Voltage control | - |
dc.subject.keywordAuthor | Switches | - |
dc.subject.keywordAuthor | Silicon | - |
dc.subject.keywordAuthor | Neuromorphic | - |
dc.subject.keywordAuthor | synaptic device | - |
dc.subject.keywordAuthor | zinc tin oxide | - |
dc.subject.keywordAuthor | density function theory | - |
dc.subject.keywordAuthor | neural network | - |
dc.subject.keywordPlus | RESISTIVE-SWITCHING MEMORY | - |
dc.subject.keywordPlus | TOTAL-ENERGY CALCULATIONS | - |
dc.subject.keywordPlus | LOW-POWER | - |
dc.subject.keywordPlus | ARTIFICIAL SYNAPSES | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | MEMRISTOR | - |
dc.subject.keywordPlus | RESET | - |
dc.relation.journalResearchArea | Computer Science | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Telecommunications | - |
dc.relation.journalWebOfScienceCategory | Computer Science, Information Systems | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Telecommunications | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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