Thermoelectric transport properties of n-Type Sb-doped (Hf, Zr, Ti)NiSn half-heusler alloys prepared by temperature-regulated melt spinning and spark plasma sintering
DC Field | Value | Language |
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dc.contributor.author | Bae, K.W. | - |
dc.contributor.author | Hwang, J.Y. | - |
dc.contributor.author | Kim, S.-I. | - |
dc.contributor.author | Jeong, H.M. | - |
dc.contributor.author | Kim, S. | - |
dc.contributor.author | Lim, J.-H. | - |
dc.contributor.author | Kim, H.-S. | - |
dc.contributor.author | Lee, K.H. | - |
dc.date.available | 2020-08-25T05:35:40Z | - |
dc.date.created | 2020-08-10 | - |
dc.date.issued | 2020-07 | - |
dc.identifier.issn | 2076-3417 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/78039 | - |
dc.description.abstract | Hereinwereport a significantly reduced lattice thermal conductivity of Sb-doped Hf0.35Zr0.35 Ti0.3NiSn half-Heusler alloys with sub-micron grains (grain size of ~300 nm). Polycrystalline bulks of Hf0.35Zr0.35Ti0.3NiSn1-xSbx (x = 0.01, 0.02, 0.03) with a complete single half-Heusler phase are prepared using temperature-regulated melt spinning and subsequent spark plasma sintering without a long annealing process. In these submicron-grained bulks, a very low lattice thermal conductivity value of ~2.4Wm-1 K-1 is obtained at 300 K due to the intensified phonon scatterings by highly dense grain boundaries and point-defects (Zr and Ti substituted at Hf-sites). A maximum thermoelectric figure of merit, zT, of 0.5 at 800 K is obtained in Hf0.35Zr0.35Ti0.3NiSn0.99Sb0.01. © 2020 by the authors. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | MDPI AG | - |
dc.relation.isPartOf | Applied Sciences (Switzerland) | - |
dc.title | Thermoelectric transport properties of n-Type Sb-doped (Hf, Zr, Ti)NiSn half-heusler alloys prepared by temperature-regulated melt spinning and spark plasma sintering | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000558017700001 | - |
dc.identifier.doi | 10.3390/app10144963 | - |
dc.identifier.bibliographicCitation | Applied Sciences (Switzerland), v.10, no.14 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85088562438 | - |
dc.citation.title | Applied Sciences (Switzerland) | - |
dc.citation.volume | 10 | - |
dc.citation.number | 14 | - |
dc.contributor.affiliatedAuthor | Lim, J.-H. | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Half-Heusler | - |
dc.subject.keywordAuthor | Sub-micron grain | - |
dc.subject.keywordAuthor | Thermal conductivity | - |
dc.subject.keywordAuthor | Thermoelectric | - |
dc.subject.keywordAuthor | TiNiSn | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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