Simulation Study on Silicon-Based Floating Body Synaptic Transistor with Short- and Long-Term Memory Functions and Its Spike Timing-Dependent Plasticity
DC Field | Value | Language |
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dc.contributor.author | Kim, Hyungjin | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Sun, Min-Chul | - |
dc.contributor.author | Park, Jungjin | - |
dc.contributor.author | Hwang, Sungmin | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.date.available | 2020-02-28T00:42:36Z | - |
dc.date.created | 2020-02-07 | - |
dc.date.issued | 2016-10 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/7808 | - |
dc.description.abstract | In this work, a novel silicon (Si) based floating body synaptic transistor (SFST) is studied to mimic the transition from short-term memory to long-term one in the biological system. The structure of the proposed SFST is based on an n-type metal-oxide- semiconductor field-effect transistor (MOSFET) with floating body and charge storage layer which provide the functions of short- and long-term memories, respectively. It has very similar characteristics with those of the biological memory system in the sense that the transition between short- and long-term memories is performed by the repetitive learning. Spike timing-dependent plasticity (STDP) characteristics are closely investigated for the SFST device. It has been found from the simulation results that the connectivity between pre- and post-synaptic neurons has strong dependence on the relative spike timing among electrical signals. In addition, the neuromorphic system having direct connection between the SFST devices and neuron circuits are designed. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEK PUBLICATION CENTER | - |
dc.relation.isPartOf | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.subject | POTENTIATION | - |
dc.subject | DEVICE | - |
dc.subject | MODEL | - |
dc.title | Simulation Study on Silicon-Based Floating Body Synaptic Transistor with Short- and Long-Term Memory Functions and Its Spike Timing-Dependent Plasticity | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000393191000016 | - |
dc.identifier.doi | 10.5573/JSTS.2016.16.5.657 | - |
dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.5, pp.657 - 663 | - |
dc.identifier.kciid | ART002158342 | - |
dc.identifier.scopusid | 2-s2.0-84994229654 | - |
dc.citation.endPage | 663 | - |
dc.citation.startPage | 657 | - |
dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.volume | 16 | - |
dc.citation.number | 5 | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Neuromorphic system | - |
dc.subject.keywordAuthor | synaptic transistor | - |
dc.subject.keywordAuthor | short- and long-term memory | - |
dc.subject.keywordAuthor | spike timing-dependent plasticity (STDP) | - |
dc.subject.keywordPlus | POTENTIATION | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | MODEL | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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