Sub-100-nA-Operating Si-Compatible Ni/Ti/HfO2/SiO2/Si RRAM Device for High-Density Integration and Low-Power Applications
DC Field | Value | Language |
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dc.contributor.author | Kim, Sungjun | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.date.available | 2020-02-28T00:42:39Z | - |
dc.date.created | 2020-02-07 | - |
dc.date.issued | 2016-10 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/7811 | - |
dc.description.abstract | In this study, we examined the switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/Ti/HfO2/SiO2/p+Si structure and its fabrication process for compatibility with complementary metal-oxide-semiconductor (CMOS). The HfO2-based RRAM device embedding SiO2 layer demonstrated ultra-low resistive switching of sub-100-nA. Also, more accurate models are proposed to explain the resistive switching and conduction mechanisms of the device. The SiO2 reduces the switching current as a tunneling barrier and the HfO2 layer plays a primary role in resistive switching by trapping and de-trapping the electrons. Furthermore, a large number of switching cycles with low reset current (41.5-nA) were demonstrated from the results of DC endurance tests. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.subject | RESISTIVE SWITCHING CHARACTERISTICS | - |
dc.subject | MEMORY | - |
dc.title | Sub-100-nA-Operating Si-Compatible Ni/Ti/HfO2/SiO2/Si RRAM Device for High-Density Integration and Low-Power Applications | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000387100600015 | - |
dc.identifier.doi | 10.1166/jnn.2016.13136 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.10, pp.10247 - 10251 | - |
dc.identifier.scopusid | 2-s2.0-84990944743 | - |
dc.citation.endPage | 10251 | - |
dc.citation.startPage | 10247 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 16 | - |
dc.citation.number | 10 | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | RRAM | - |
dc.subject.keywordAuthor | HfO2 | - |
dc.subject.keywordAuthor | SiO2 | - |
dc.subject.keywordAuthor | Si CMOS Compatibility | - |
dc.subject.keywordAuthor | Switching Current | - |
dc.subject.keywordAuthor | Model | - |
dc.subject.keywordPlus | RESISTIVE SWITCHING CHARACTERISTICS | - |
dc.subject.keywordPlus | MEMORY | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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