Bipolar resistive switching with unidirectional selector function in nitride/oxide heterostructures
DC Field | Value | Language |
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dc.contributor.author | Cho, Hyojong | - |
dc.contributor.author | Ryu, Ji-Ho | - |
dc.contributor.author | Mahata, Chandreswar | - |
dc.contributor.author | Ismail, Muhammad | - |
dc.contributor.author | Chen, Ying-Chen | - |
dc.contributor.author | Chang, Yao-Feng | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Mikhaylov, Alexey | - |
dc.contributor.author | Lee, Jack C. | - |
dc.contributor.author | Kim, Sungjun | - |
dc.date.available | 2020-09-03T04:35:30Z | - |
dc.date.created | 2020-09-03 | - |
dc.date.issued | 2020-10 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/78126 | - |
dc.description.abstract | In this work, we propose a self-rectifying Ni/SiNx/HfO2/p(++)Si resistive memory device to alleviate the sneak-path current occurring in crossbar array. The bilayer (Ni/SiNx/HfO2/p(++)Si) device exhibits a much higher rectification ratio (>10(4)) in the low-resistance state for DC sweep mode and pulse mode than single-layer devices (Ni/SiNx/p(++)Si and Ni/HfO2/p(++)Si). The suppressed current of the bilayer device can be explained by the high Schottky barrier of the HfO(2)layer under a negative bias. The modified read bias scheme in the crossbar array structure ensures a large number of word line (similar to 3971 at a read margin of 10%) using the advantage of the high rectification of the bilayer device. The bilayer device with the proposed read bias scheme is promising for high-density memory applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.relation.isPartOf | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.title | Bipolar resistive switching with unidirectional selector function in nitride/oxide heterostructures | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000560099300001 | - |
dc.identifier.doi | 10.1088/1361-6463/ab9ad9 | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.53, no.43 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85090673321 | - |
dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.volume | 53 | - |
dc.citation.number | 43 | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | resistive switching | - |
dc.subject.keywordAuthor | selector | - |
dc.subject.keywordAuthor | heterostructure | - |
dc.subject.keywordPlus | SILICON-NITRIDE | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | RRAM | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | GATE | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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