Oxygen Vacancy Controlled SiZnSnO Thin-Film Inverters with High Gain
DC Field | Value | Language |
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dc.contributor.author | Byun, Jae Min | - |
dc.contributor.author | Lee, Sang Yeol | - |
dc.date.available | 2020-10-20T06:42:13Z | - |
dc.date.created | 2020-08-25 | - |
dc.date.issued | 2020-06 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/78480 | - |
dc.description.abstract | Amorphous SiZnSnO (a-SZTO) thin films are successfully deposited to control the electrical characteristics by changing the oxygen partial pressure [p(O-2)] ratio during the deposition. As the p(O-2) ratio increases, the on current, off current, and the field effect mobility (mu(FE)) decrease and the threshold voltage (V-th) shift to the positive direction gradually. This phenomenon occurs because the oxygen vacancies (V-O) in the channel are suppressed due to the effect of oxygen injected during the deposition. To explore the possibility that the device can be applied to integrated thin-film circuit and operate well in the application, the n-type only inverters are fabricated using V-O controlled thin-film transistors (TFTs). All inverters have clear voltage transfer characteristics (VTCs) and well operate in the range of 3-15 V of V-DD. When V-th shifts to positive direction in enhancement mode (E-mode), the voltage transition region (V-tr) of the inverter also shifts to positive direction. The highest voltage gain is measured to be about 26.554 V/V at 15 V of V-DD. It is proposed to be able to fabricate the inverters and control the transition value of VTCs of the inverter simply by changing p(O-2) ratio of E-mode TFT. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.relation.isPartOf | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.title | Oxygen Vacancy Controlled SiZnSnO Thin-Film Inverters with High Gain | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000527299300001 | - |
dc.identifier.doi | 10.1002/pssa.201900978 | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.217, no.12 | - |
dc.description.isOpenAccess | N | - |
dc.citation.title | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.volume | 217 | - |
dc.citation.number | 12 | - |
dc.contributor.affiliatedAuthor | Lee, Sang Yeol | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | amorphous oxide semiconductors | - |
dc.subject.keywordAuthor | n-type only inverters | - |
dc.subject.keywordAuthor | oxygen partial pressure | - |
dc.subject.keywordAuthor | thin-film transistors | - |
dc.subject.keywordPlus | PARTIAL-PRESSURE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | TFTS | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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