Negative Transconductance Heterojunction Organic Transistors and their Application to Full-Swing Ternary Circuits
DC Field | Value | Language |
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dc.contributor.author | Yoo, Hocheon | - |
dc.contributor.author | On, Sungmin | - |
dc.contributor.author | Lee, Seon Baek | - |
dc.contributor.author | Cho, Kil Won | - |
dc.contributor.author | Kim, Jae-Joon | - |
dc.date.available | 2020-10-20T06:43:56Z | - |
dc.date.created | 2020-06-10 | - |
dc.date.issued | 2019-07 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/78556 | - |
dc.description.abstract | Multivalued logic (MVL) computing could provide bit density beyond that of Boolean logic. Unlike conventional transistors, heterojunction transistors (H-TRs) exhibit negative transconductance (NTC) regions. Using the NTC characteristics of H-TRs, ternary inverters have recently been demonstrated. However, they have shown incomplete inverter characteristics; the output voltage (V-OUT) does not fully swing from V-DD to G(ND). A new H-TR device structure that consists of a dinaphtho[2,3-b:2 ',3 '-f]thieno[3,2-b]thiophene (DNTT) layer stacked on a PTCDI-C13 layer is presented. Due to the continuous DNTT layer from source to drain, the proposed device exhibits novel switching behavior: p-type off/p-type subthreshold region /NTC/ p-type on. As a result, it has a very high on/off current ratio (approximate to 10(5)) and exhibits NTC behavior. It is also demonstrated that an array of 36 of these H-TRs have 100% yield, a uniform on/off current ratio, and uniform NTC characteristics. Furthermore, the proposed ternary inverter exhibits full V-DD-to-G(ND) swing of V-OUT with three distinct logic states. The proposed transistors and inverters exhibit hysteresis-free operation due to the use of a hydrophobic gate dielectric and encapsulating layers. Based on this, the transient operation of a ternary inverter circuit is demonstrated for the first time. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.relation.isPartOf | ADVANCED MATERIALS | - |
dc.title | Negative Transconductance Heterojunction Organic Transistors and their Application to Full-Swing Ternary Circuits | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000477975900024 | - |
dc.identifier.doi | 10.1002/adma.201808265 | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.31, no.29 | - |
dc.description.isOpenAccess | N | - |
dc.citation.title | ADVANCED MATERIALS | - |
dc.citation.volume | 31 | - |
dc.citation.number | 29 | - |
dc.contributor.affiliatedAuthor | Yoo, Hocheon | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | anti-ambipolar transistor | - |
dc.subject.keywordAuthor | heterojunction | - |
dc.subject.keywordAuthor | organic semiconductors | - |
dc.subject.keywordAuthor | ternary inverter | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordPlus | LOGIC | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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