Effects of nitrogen doping in amorphous carbon layers on the diffusion of fluorine atoms: A first-principles study
- Authors
- Park, Hwanyeol; Lee, Sungwoo; Kim, Ho Jun; Woo, Daekwang; Park, Se Jun; Lee, Jong Myeong; Yoon, Euijoon; Lee, Gun-Do
- Issue Date
- Apr-2019
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.125, no.15
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 125
- Number
- 15
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/78581
- DOI
- 10.1063/1.5064437
- ISSN
- 0021-8979
- Abstract
- We investigated the effects of nitrogen doping in amorphous carbon layers on the diffusion of fluorine atoms based on density functional theory calculations. For N doping at both substitutional and interstitial sites, the F atom binds to the surrounding C atoms rather than the N atom during structural relaxation due to the electrostatic repulsion between N and F atoms. Furthermore, the diffusion barriers associated with the F atom passing by the N atom are extremely large (5.19 eV for substitutional N doping and 4.77 eV for interstitial N doping), primarily due to the electrostatic repulsion originating from the strong electronegativities of both atoms. The results clearly show that N doping increases the diffusion barrier of the F atom, thereby suppressing the diffusion of the F atom. The findings provide information about the role of N doping in amorphous carbon layers and yield insights for improving the fabrication processes of future integrated semiconductor devices. Published under license by AIP Publishing.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 공과대학 > 기계공학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/78581)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.